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INTEGRATED CIRCUITS
DATA SHEET
TZA3023 SDH/SONET STM4/OC12 transimpedance amplifier
Product specification Supersedes data of 2000 Mar 29 2002 Sep 05
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
FEATURES * Wide dynamic input range from 1 A to 1.5 mA * Low equivalent input noise of 3.5 pA/Hz (typical) * Differential transimpedance of 21 k * Wide bandwidth from DC to 600 MHz * Differential outputs * On-chip Automatic Gain Control (AGC) * No external components required * Single supply voltage from 3.0 to 5.5 V * Bias voltage for PIN diode * Pin compatible with SA5223 * Goldplated version available for direct placement of photodiode on die. ORDERING INFORMATION TYPE NUMBER TZA3023T TZA3023U TZA3023U/G PACKAGE NAME SO8 - - DESCRIPTION plastic small outline package; 8 leads; body width 3.9 mm bare die in waffle pack carriers; die dimensions 1.030 x 1.300 mm bare die with goldplating in waffle pack carriers; die dimensions 1.030 x 1.300 mm APPLICATIONS
TZA3023
* Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high-speed data networks * Wideband RF gain block. DESCRIPTION The TZA3023 is a low-noise transimpedance amplifier with AGC designed to be used in STM4/OC12 fibre optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage.
VERSION SOT96-1 - -
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
BLOCK DIAGRAM
TZA3023
handbook, full pagewidth
VCC 8 (11, 12) 2 k DREF 1 (1) GAIN CONTROL
AGC(1) (13) peak detector
IPhoto 3 (4) 7 (10) OUTQ A1 low noise amplifier single-ended to differential converter 6 (9) OUT
TZA3023
2, 4, 5 (2, 3, 5, 6, 7, 8)
BIASING
MGK918
GND
The numbers in brackets refer to the pad numbers of the bare die version. (1) AGC analog I/O is only available on the TZA3023U (pad 13).
Fig.1 Block diagram.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
PINNING SYMBOL DREF GND IPhoto GND GND OUT OUTQ VCC AGC Note 1. For the TZA3023U/G this pad is connected to the gold layer on top of the passivation layer. PIN TZA3023T 1 2 3 4 5 6 7 8 - PAD TZA3023U 1 2, 3 4 5, 6 7, 8 9 10 11, 12 13 TYPE analog output ground analog input ground ground output output supply input/output DESCRIPTION
TZA3023
bias voltage for PIN diode; cathode should be connected to this pin; note 1 ground current input; anode of PIN diode should be connected to this pin; DC bias level of 800 mV, one diode voltage above ground ground ground data output; pin OUT goes HIGH when current flows into pin IPhoto data output; compliment of pin OUT supply voltage AGC analog I/O
handbook, halfpage
DREF 1 GND 2
8 VCC 7 OUTQ OUT GND
TZA3023T
IPhoto GND 3 4
MGK917
6 5
Fig.2 Pin configuration.
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
FUNCTIONAL DESCRIPTION The TZA3023 is a transimpedance amplifier intended for use in fibre optic links for signal recovery in STM4/OC12 applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and transforms it into a differential output voltage. The most important characteristics of the TZA3023 are high receiver sensitivity and wide dynamic range. High receiver sensitivity is achieved by minimizing noise in the transimpedance amplifier. The signal current generated by a PIN diode can vary between 1 A to 1.5 mA (p-p). An AGC loop is implemented to make it possible to handle such a wide dynamic range. The AGC loop increases the dynamic range of the receiver by reducing the feedback resistance of the preamplifier.
TZA3023
The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not needed for AGC. The AGC voltage can be monitored at pad 13 on the bare die (TZA3023U). Pad 13 is not bonded in the packaged device (TZA3023T). This pad can be left unconnected during normal operation. It can also be used to force an external AGC voltage. If pad 13 is connected to GND, the internal AGC loop is disabled and the receiver gain is at a maximum. The maximum input current is then approximately 50 A. A differential amplifier converts the single-ended output of the preamplifier to a differential output voltage (see Fig.3).
handbook, full pagewidth
VCC 600 600 30 30 VOUTQ VOUT 4.5 mA 2 mA 4.5 mA
MGK922
Fig.3 Data output buffer.
handbook, full pagewidth
CML/PECL OUTPUT VCC VO(max) VOQH VOH Vo (p-p) VOQL VOL VO(min) VOO
MGK885
Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
PIN diode bias voltage DREF The transimpedance amplifier together with the PIN diode determines the performance of an optical receiver for a large extent. Especially how the PIN diode is connected to the input and the layout around the input pin influence the key parameters like sensitivity, bandwidth and the Power Supply Rejection Ratio (PSRR) of a transimpedance amplifier. The total capacitance at the input pin is critical to obtain the highest sensitivity. It should be kept to a minimum by reducing the capacitor of the PIN diode and the parasitics around the input pin. The PIN diode should be placed very close to the IC to reduce the parasitics. Because the capacitance of the PIN diode depends on the reverse voltage across it, the reverse voltage should be chosen as high as possible. The PIN diode can be connected to the input in two ways as shown in Figs 5 and 6. In Fig.5 the PIN diode is connected between DREF and IPhoto. Pin DREF provides an easy bias voltage for the PIN diode. The voltage at DREF is derived from VCC by a low-pass filter. The low-pass filter consisting of the internal resistor R1, C1 and the external capacitor C2 rejects the supply voltage noise. The external capacitor C2 should be equal or larger then 1 nF for a high PSRR.
TZA3023
The reverse voltage across the PIN diode is 4.2 V (5 - 0.8 V) for 5 V supply or 2.5 V (3.3 - 0.8 V) for 3.3 V supply. The DC voltage at DREF decreases with increasing signal levels. Consequently the reverse voltage across the PIN diode will also decrease with increasing signal levels. This can be explained with an example. When the PIN diode delivers a peak-to-peak current of 1 mA, the average DC current will be 0.5 mA. This DC current is delivered by VCC through the internal resistor R1 of 2 k which will cause a voltage drop of 1 V across the resistor and the reverse voltage across the PIN diode will be reduced by 1 V. It is preferable to connect the cathode of the PIN diode to a higher voltage then VCC when such a voltage source is available on the board. In this case pin DREF can be left unconnected. When a negative supply voltage is available, the configuration in Fig.6 can be used. It should be noted that in this case the direction of the signal current is reversed compared to Fig.5. Proper filtering of the bias voltage for the PIN diode is essential to achieve the highest sensitivity level.
VCC R1 2 k 4 Ii C1 10 pF 8 DREF 4
VCC R1 2 k C1 10 pF 8
DREF C2 1 nF
7 IPhoto Ii
IPhoto 7
TZA3023
MCD900
TZA3023
MCD901
negative supply voltage
Fig.5
The PIN diode connected between the input and pin DREF.
Fig.6
The PIN diode connected between the input and a negative supply voltage.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
AGC TZA3023 transimpedance amplifier can handle input currents from 0.5 A to 1.5 mA. This means a dynamic range of 72 dB. At low input currents, the transimpedance must be high to get enough output voltage, and the noise should be low enough to guaranty minimum bit error rate. At high input currents however, the transimpedance should be low to avoid pulse width distortion. This means that the gain of the amplifier has to vary depending on the input signal level to handle such a wide dynamic range. This is achieved in the TZA3023 by implementing an Automatic Gain Control (AGC) loop. The AGC loop consists of a peak detector, a hold capacitor and a gain control circuit. The peak amplitude of the signal is detected by the peak detector and it is stored on the hold capacitor. The voltage over the hold capacitor is compared to a threshold level. The threshold level is set to 10 A (p-p) input current. AGC becomes active only for input signals larger than the threshold level.
TZA3023
It is disabled for smaller signals. The transimpedance is then at its maximum value (21 k differential). When the AGC is active, the feedback resistor of the transimpedance amplifier is reduced to keep the output voltage constant. The transimpedance is regulated from 21 k at low currents (I < 10 A) to 800 at high currents (I < 500 A). Above 500 A the transimpedance is at its minimum and can not be reduced further but the front-end remains linear until input currents of 1.5 mA. The upper part of Fig.7 shows the output voltages of the TZA3023 (OUT and OUTQ) as a function of the DC input current. In the lower part, the difference of both voltages is shown. It can be seen from the figure that the output changes linearly up to 10 A input current where AGC becomes active. From this point on, AGC tries to keep the differential output voltage constant around 200 mV for medium range input currents (input currents <200 A). The AGC can not regulate any more above 600 A input current, and the output voltage rises again with the input current.
MCD914
handbook, full pagewidth V
1.8
o (V)
VOUT 1.6
1.4
VCC = 3 V
1.2 VOUTQ 1 600 Vo(dif) (mV) 400
(2) (3) (1)
200
0 1 10
102
103
Ii (A)
104
Vo(dif) = VOUT - VOUTQ. (1) VCC = 3 V. (2) VCC = 3.3 V. (3) VCC = 5 V.
Fig.7 AGC characteristics.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC Vn supply voltage DC voltage pin 3/pad 4: IPhoto pins 6 and 7/pads 9 and 10: OUT and OUTQ pad 13: AGC (TZA3023U only) pin 1/pad 1: DREF In DC current pin 3/pad 4: IPhoto pins 6 and 7/pads 9 and 10: OUT and OUTQ pad 13: AGC (TZA3023U only) pin 1/pad 1: DREF Ptot Tstg Tj Tamb HANDLING total power dissipation storage temperature junction temperature ambient temperature -1 -15 -0.2 -2.5 - -65 - -40 +2.5 +15 +0.2 +2.5 300 +150 125 +85 -0.5 -0.5 -0.5 -0.5 +1 PARAMETER MIN. -0.5
TZA3023
MAX. +6 V V V V V
UNIT
VCC + 0.5 VCC + 0.5 VCC + 0.5
mA mA mA mA mW C C C
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during assembly and handling of the bare die. Additional safety can be obtained by bonding the VCC and GND pads first, the remaining pads may then be bonded to their external connections in any order. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE 160 UNIT K/W
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TZA3023
CHARACTERISTICS Typical values at Tamb = 25 C and VCC = 5 V; minimum and maximum values are valid over the entire ambient temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified. SYMBOL VCC ICC PARAMETER supply voltage supply current VCC = 5 V; AC coupled; RL = 50 VCC = 3.3V; AC coupled; RL = 50 Ptot Tj Tamb Rtr total power dissipation junction temperature ambient temperature differential small-signal transresistance of the receiver high frequency -3 dB point power supply rejection ratio VCC = 5 V; AC coupled; RL = 50 VCC = 3.3 V; AC coupled; RL = 50 VCC = 5 V; Ci = 0.7 pF VCC = 3.3 V; Ci = 0.7 pF PSRR measured differentially; note 1 f = 100 kHz to 10 MHz f = 10 to 100 MHz f = 100 MHz to 1 GHz Bias voltage: pin DREF RDREF resistance between pins DREF and VCC input bias voltage on pin IPhoto input current on pin IPhoto (peak-to-peak value) small-signal input resistance total integrated RMS noise current over bandwidth (referenced to input) VCC = 5 V; note 2 VCC = 3.3 V; note 2 fi = 1 MHz; input current <2 A (p-p) note 3 f = 311 MHz f = 450 MHz f = 622 MHz - - - 55 80 120 - - - nA nA nA DC tested 1680 2000 2320 - - - 1 2 5 2 5 100 A/V A/V A/V VCC = 5 V VCC = 3.3 V CONDITIONS 3 23 20 - - -40 -40 17.5 16 450 440 MIN. 5 28 28 140 95 - +25 21 19.5 580 520 TYP. 45 42 248 152 +125 +85 25 25 750 600 MAX. 5.5 UNIT V mA mA mW mW C C k k MHz MHz
f-3dB(h)
Input: pin IPhoto Vbias(IPhoto) Ii(IPhoto)(p-p) Ri In(tot) 720 -1500 -1000 - 800 +4 +4 95 970 +1500 +1000 - mV A A
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
SYMBOL PARAMETER CONDITIONS MIN. VCC - 2 TYP. VCC - 1.7 200 0 50 510 550
TZA3023
MAX. VCC - 1.4 330 +100 62 700 700
UNIT
Data outputs: pins OUT and OUTQ Vo(cm) Vo(se)(p-p) VOO Ro(se) tr, tf common mode output voltage AC coupled; RL = 50 single-ended output voltage (peak-to-peak value) differential output offset voltage single-ended output resistance rise time, fall time DC tested V mV mV ps ps AC coupled; RL = 50 ; 75 input current 100 A (p-p) -100 40
VCC = 5 V; 20% to 80%; 400 input current <10 A (p-p) VCC = 3.3 V; 20% to 80%; 450 input current <10 A (p-p)
Automatic gain control loop: pad AGC Ith(AGC) tatt(AGC) tdecay(AGC) Notes 1. PSRR is defined as the ratio of the equivalent current change at the input (IIPhoto) to a change in supply voltage: I IPhoto PSRR = ------------------V CC For example, a + 4 mV disturbance on VCC at 10 MHz will typically add an extra 8 nA to the photodiode current. The external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with an external capacitor of 1 nF. The PSSR is guaranteed by design. 2. The Pulse Width Distortion (PWD) is <5% over the whole input current range. The PWD is defined as: pulse width PWD = ----------------------------- - 1 x 100% where T is the clock period. The PWD is measured differentially with T PRBS pattern of 10-23. 3. All In(tot) measurements were made with an input capacitance of Ci = 1.2 pF. This was comprised of 0.7 pF for the photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise performance is measured differentially. AGC threshold current AGC attack time AGC decay time referred to the peak input - current; tested at 10 MHz - - 10 5 10 - - - A s ms
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TYPICAL PERFORMANCE CHARACTERISTICS
MCD908
TZA3023
handbook, halfpage
40
ICC
handbook, halfpage
31.4
MCD909
(mA) 36
(2)
ICC (mA) 31.0
32
(1)
(3)
30.6
28
24
30.2
20 -40
0
40
80
Tj (C)
120
29.8 3 4 5 VCC (V) 6
(1) VCC = 5 V. (2) VCC = 3.3 V. (3) VCC = 3 V.
Fig.8
Supply current as a function of the junction temperature.
Fig.9
Supply current as a function of the supply voltage.
handbook, halfpage
808
MCD910
handbook, halfpage
900
MCD911
Vi (mV) 806
Vi (mV) 820
(2)
(1) (3)
804
740 802
800 3 4 5 VCC (V) 6
660 -40
0
40
80
Tj (C)
120
(1) VCC = 5 V. (2) VCC = 3.3 V. (3) VCC = 3 V.
Fig.10 Input voltage as a function of the supply voltage.
Fig.11 Input voltage as a function of the junction temperature.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TZA3023
handbook, halfpage
1.686
MCD912
handbook, halfpage
1.85
MCD913
Vo(cm) (V) 1.680
(1)
Vo(cm) (V) 1.75
(1)
(2)
1.674
1.65 1.668
(2)
1.662 3 4 5 VCC (V) 6
1.55 -40
0
40
80
Tj (C)
120
(1) VCC - VOUT. (2) VCC - VOUTQ.
VCC = 3.3 V. (1) VCC - VOUT. (2) VCC - VOUTQ.
Fig.12 Common mode voltage at the output as a function of the supply voltage.
Fig.13 The common mode voltage at the output as a function of the junction temperature.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
APPLICATION AND TEST INFORMATION
TZA3023
handbook, full pagewidth
10 H 22 nF VCC 8 DREF 1 680 nF
VP
7
OUTQ OUT
Zo = 50
100 nF
TZA3023T
IPhoto 1 nF 2 GND 4 GND 5 GND 6 3
Zo = 50
100 nF 50 50
MCD898
Fig.14 Application diagram.
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k, full pagewidth
2002 Sep 05
VCC
(1)
Philips Semiconductors
SDH/SONET STM4/OC12 transimpedance amplifier
680 nF
(1)
(1)
22 nF VCC 8 DREF 1 nF OUTQ 8 pF 6 OUT noise filter: 1-pole, 400 MHz GND 16.4 nH 7.5 pF 1.1 pF 100 10 nF DINQ 10 nF DIN
100 nF VCCA 6
61 k RSET 16 7 CF Vref 15 VCCD 14
100 nF
1
7
4
13
DOUT data out
TZA3023T
IPhoto 3
TZA3044
5 12 DOUTQ
14
2 GND
4 GND
5
3 AGND
1 SUB
8 JAM
9 STQ
10 ST
11 DGND level-detect status 1 k 50 50 VCC - 2 V
MCD899
16.4 nH
optional noise filter: 3-pole, 470 MHz Bessel
Product specification
TZA3023
(1) Ferrite bead e.g. Murata BLM10A700S.
Fig.15 STM4/OC12 receiver using the TZA3023T and postamplifier TZA3044.
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
Test circuits
TZA3023
handbook, full pagewidth
ZT = s21.(R + Zi) . 2
R = 1 k, Zi = 100
NETWORK ANALYZER
S-PARAMETER TEST SET PORT 1 Zo = 50 VCC 223-1 PRBS 100 nF PATTERN GENERATOR C C D D TR C IN 10 nF 1 k IPhoto 51 OUTQ 100 nF OUT SAMPLING OSCILLOSCOPE/ TDR/TDT 1 2 TR PORT 2 Zo = 50
TZA3023
OM5803
Zo = 50
MCD902
Fig.16 Electrical test circuit.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TZA3023
handbook, full pagewidth
LIGHTWAVE MULTIMETER -9.54 dBm OPTICAL INPUT ERROR DETECTOR OPTICAL ATTENUATOR 0 dBm/1300 IN OUT 90% 10% VCC Data in Clock in
22 nF 223-1 PRBS PATTERN GENERATOR C C D D TR C IN DINQ Laser DREF LASER DRIVER DIN PIN 10 nF IPhoto 100 nF OUT SAMPLING OSCILLOSCOPE/ TDR/TDT TR 1 2
OUTQ 100 nF
TZA3023
TZA3001 OM5802
622.080 MHz
OM5804
Zo = 50
MCD903
Fig.17 Optical test circuit.
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TZA3023
handbook, full pagewidth
MCD904
Fig.18 Differential output with -30 dBm optical input power [input current of 1.63 A (p-p)].
handbook, full pagewidth
MCD905
Fig.19 Differential output with -20 dBm optical input power [input current of 16.3 A (p-p)].
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
TZA3023
handbook, full pagewidth
MCD906
Fig.20 Differential output with -10 dBm optical input power [input current of 163 A (p-p)].
handbook, full pagewidth
MCD907
Fig.21 Differential output with -2 dBm optical input power [input current of 1030 A (p-p)].
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
BONDING PAD LOCATIONS
AGC VCC
TZA3023
COORDINATES(1) SYMBOL DREF GND GND IPhoto GND GND GND GND OUT OUTQ VCC VCC AGC Note 1. All coordinates are referenced, in m, to the bottom left-hand corner of the die. PAD x 1 2 3 4 5 6 7 8 9 10 11 12 13 95 95 95 95 215 360 549 691 785 785 567 424 259 y 881 618 473 285 95 95 95 95 501 641 1055 1055 1055
x GND 0 0 y 5 IPhoto 4 1300 GND m GND 2 3 DREF 1
13
12
11
VCC
TZA3023U
10 9
OUTQ OUT
6 GND
7 GND 1030 m
8 GND
MCD897
Fig.22 Bonding pad locations of the TZA3023U.
AGC
VCC 12
handbook, full pagewidth
13
11
DREF
1
VCC
1300 GND m GND
2 3
TZA3023U/G
10 9
OUTQ 725 m OUT
IPhoto
4
5 x GND 0
6 GND
7 GND 1030 m
8 GND
0 y
455 m
MCE067
Fig.23 Bonding pad plus gold plate locations of the TZA3023U/G.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
Physical characteristics of the bare die PARAMETER Gold layer(1) 2.8 m Au + 3.2 m TiW 2.1 m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride Glass passivation Bonding pad dimension Metallization Thickness Size Backing Attach temperature Attach time Note 1. For the TZA3023U/G version only. VALUE
TZA3023
minimum dimension of exposed metallization is 90 x 90 m (pad size = 100 x 100 m) 1.22 m W/AlCu/TiW 380 m nominal 1.03 x 1.30 mm (1.34 mm2) silicon; electrically connected to GND potential through substrate contacts <440 C; recommended die attach is glue <15 s
2002 Sep 05
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
TZA3023
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03 JEDEC MS-012 EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
TZA3023
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE(1) BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes not suitable not suitable(3)
TZA3023
SOLDERING METHOD WAVE REFLOW(2) suitable suitable suitable suitable suitable
suitable not not recommended(4)(5) recommended(6)
1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Sep 05
23
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
TZA3023
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
2002 Sep 05
24
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
TZA3023
Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Bare die All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
2002 Sep 05
25
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
NOTES
TZA3023
2002 Sep 05
26
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12 transimpedance amplifier
NOTES
TZA3023
2002 Sep 05
27
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp28
Date of release: 2002
Sep 05
Document order number:
9397 750 10128

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